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Pheda1215A
X-Ray Dynamic Flat Panel Detector
Pheda1215A series X-ray dynamic flat detector are d on advanced CMOS imaging technology, with high speed, high resolution and low noise characteristics, widely used in electronic parts testing, micro CT, lithium battery testing, casting inspection, automotive avionics manufacturing quality control and other non-destructive testing fields. The detector is equipped with GigE Vision, which makes it
easier for users to obtain data.
Product Features
49.5μm pixel size
2940×2342 pixel matrix
Long irradiation life(10kGy)
Applications
- Electronic component inspection
- Micro CT
- Lithium battery inspection
- Casting inspection
- Automobile, spaceflight, electronic manufacturing quality control
Electronic component inspection
Micro CT
Lithium battery inspection
Casting inspection
Automobile, spaceflight, electronic manufacturing quality control
Specfication
Transducers
Type
CMOS
Pixel size
49.5μm
Pixel matrix
2940×2342
Effective area
145.5×115.9 mm²
Scintillator
CsI
Irradiation lifetime
10kGy
Energy Range
40kV~160kV
Function
Acquisition mode
Continuous/Synchronous
Trig mode
Internal/External
ROI
Programmable size and location
Other
Interface
RJ45（Ethernet protocol interface）
Power supply
DC12V±10%
Consumption
≤6W
Usage environment
+10ºC~+40ºC
Storage environment
-20ºC~+60ºC
Product Comparison
Comparison
Model Type Pixel size Pixel matrix Effective area Rate Scintillator Irradiation lifetime Energy Range Acquisition mode Trig mode ROI Interface Power supply Consumption Usage environment Storage environment Weight External dimensions(W×L×H)
Pheda3030 CMOS 100μm 3000×3000 300×300mm² CsI 40kV～160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 DC24V±10%
Pheda1613D a-Si(TFT) 125μm 1274×1024 160×128mm²（6×5in） CsI 20kGy 40kV~230kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45 (以太网协议接口) DC24V±10% ≤12W +5ºC~+35ºC -20ºC~+60ºC
Pheda1412-5G CMOS 100µm 1404×1204 140.4×120.4mm² CsI 20kGy 40kV～160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45 (以太网协议接口) DC12V±10% ≤15W +10ºC~+40ºC -20ºC~+60ºC
Pheda1512 CMOS 100µm 1440×1120 144.0×112.0mm² CsI/GOS 20kGy 40kV～160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45 (以太网协议接口) DC12V±10% ≤10W +10ºC~+40ºC -20ºC~+60ºC
Pheda1412 CMOS 100µm 1404×1204 140.4×120.4mm² CsI/GOS 20kGy 40kV～160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45 (以太网协议接口) DC12V±10% ≤10W +10ºC~+40ºC -20ºC~+60ºC
Pheda0606A CMOS 49.5μm 1172×1260 58.0×62.4mm² CsI 10kGy 40kV~160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45（以太网协议接口） DC12V±10% ≤4W +10ºC~+40ºC -20ºC~+55ºC
Pheda1313 CMOS 100µm 1280×1280 128.0×128.0mm² CsI/GOS 20kGy 40kV~160kV 连续触发/触发模式 内触发/外触发 自定义任意尺寸 RJ45 (以太网协议接口) DC12V±10% ≤10W +10ºC~+40ºC -20ºC~+60ºC
Comparison
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